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Determination of Energy Band Gap In Semiconductor

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    Object:

    • To draw the characteristics of a P-N junction diode for reverse saturation current and temperature.
    • To determine the energy band gap in a P-N junction diode.

    Features:

    The board consists of the following built-in parts :
    01. 2V D.C. at 10mA, regulated power supply.
    02. Digital microammeter, 3½ digits having range 200mA D.C.
    03. Semiconductor diode.
    04. Thermometer 0-110 °C.
    05. Oven, electrically heated to heat the semiconductor diode.
    06. Mains ON/OFF switch and fuse.

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